IRFZ44N is a N-channel power MOSFETs with VDS max: 55 V, RDS (on) max: 17.5 mOhm, Package: TO-220, Technology: IR MOSFET™, ID max: 49 A

Description: N-channel enhancement mode TrenchMOS transistor. Manufacturer: NXP Semiconductors.

This article provides an overview of the IRFZ44N, including its features, applications, pin configuration, circuit design, electrical characteristics, available alternatives, and troubleshooting tips.

View IRFZ44N by NXP USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.

Apr 18, 2019 · The IRFZ44N is a N-channel MOSFET with a high drain current of 49A and low Rds value of 17.5 mΩ. It also has a low threshold voltage of 4V at which the MOSFET will start conducting.

Jun 3, 2025 · The IRFZ44N MOSFET is specifically designed for applications like motor drivers, inverters, SMPS, and LED systems. And, this is because of its high current carrying capacity, low on …

The IRFZ44N is an N-channel power MOSFET widely used in switching and amplification applications. It features a low on-resistance of 0.017Ω, allowing high current conduction up to 49A, with a drain …

Sep 13, 2024 · It is known for its high current handling capability, low on-resistance, and fast switching speed. This article will provide a comprehensive guide on the IRFZ44N MOSFET, including its …

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

enhancement mode transistor IRFZ44N GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device …